Proton-irradiation-induced intermixing of InGaAs quantum dots
نویسندگان
چکیده
منابع مشابه
Proton-irradiation-induced intermixing of InGaAs quantum dots
Proton irradiation was used to create interdiffusion in In0.5Ga0.5As quantum dots ~QDs!, grown by low-pressure metalorganic chemical vapor deposition. After 25-keV proton irradiation, the QD samples were annealed at two temperatures ~700 or 750 °C! for 30 s. It was found that much lower annealing temperatures were needed to recover the photoluminescence signals than in the quantum-well case. La...
متن کاملProton implantation-induced intermixing of InAs/ InP quantum dots
Proton implantation-induced intermixing of InAs quantum dots QDs capped with InP, GaInAsP, and InP and InGaAs layers grown by metal-organic chemical vapor deposition is investigated. The samples are annealed at 750, 800, 850, and 900 °C for 30 s and thermal stability of the QDs is studied. The optimum annealing temperature is around 800 °C which gives maximum implantation-induced energy shift. ...
متن کاملIntermixing of InGaAs/GaAs quantum wells and quantum dots using sputter-deposited silicon oxynitride capping layers
Related Articles Thermal annealing effect on material characterizations of β-Ga2O3 epilayer grown by metal organic chemical vapor deposition Appl. Phys. Lett. 102, 011119 (2013) Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends J. Appl. Phys. 113, 021301 (2013) Crystallinity of inorganic films grown by atomic layer deposition: Overview and general tr...
متن کاملProton irradiation-induced intermixing in InxGa1−xAs/InP quantum wells—the effect of In composition
We have investigated atomic intermixing in InxGa1−xAs/InP quantum well (QW) structures induced by proton irradiation using photoluminescence (PL) and time-resolved photoluminescence. Photoluminescence results revealed that energy shift was systematically decreased as irradiation temperature was increased, followed by a broadening of the PL linewidth and reduction of the PL intensity. Time-resol...
متن کاملDefect-Induced Photoluminescence Blinking of Single Epitaxial InGaAs Quantum Dots
Here we report two types of defect-induced photoluminescence (PL) blinking behaviors observed in single epitaxial InGaAs quantum dots (QDs). In the first type of PL blinking, the "off" period is caused by the trapping of hot electrons from the higher-lying excited state (absorption state) to the defect site so that its PL rise lifetime is shorter than that of the "on" period. For the "off" peri...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2003
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.1561153